LMBT2516QLT1G_15 Datasheet, PDF (1/3 Pages) Leshan Radio Company – General Purpose Transistors

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
LMBT2516QLT1G
Series
FEATURE
ƽHigh current capacity in compact package.
ƽEpitaxial planar type.
ƽNPN complement: LMBT2506QLT1G
ƽWe declare that the material of product compliance with RoHS requirements.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LMBT2516PLT1G
1GB
3000/Tape&Reel
LMBT2516PLT3G
1GB
10000/Tape&Reel
LMBT2516QLT1G
1GD
3000/Tape&Reel
LMBT2516QLT3G
LMBT2516RLT1G
1GD
1GF
10000/Tape&Reel
3000/Tape&Reel
LMBT2516RLT3G
LMBT2516SLT1G
LMBT2516SLT3G
1GF
1GH
1GH
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Symbol
VCEO
VCBO
VEBO
IC
Max
-25
-40
-5
-500
Unit
V
V
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,(1)
TA=25°C
Derate above 25°C
Thermal Resistance,Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA=25°C
Derate above 25°C
Symbol
PD
R θJ A
P_D
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
mW/°C
Thermal Resistance,Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
R θJ A
T j,T St g
417
-55 to +150
°C/W
°C
3
1
2
SOT–23
COLLECTOR
3
1
BASE
2
EMITTER
Rev.O 1/3