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LMBT2222AWT1G_15 Datasheet, PDF (1/3 Pages) Leshan Radio Company – General Purpose Transistors | |||
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LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
These transistors are designed for general
purpose amplifier applications. They are
housed in the SOTâ323/SCâ70 package which
is designed for low power surface mount
applications.
We declare that the material of product
compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LMBT2222AWT1G
S-LMBT2222AWT1G
3
1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
2
CASE 419â02, STYLE 3
SOTâ323 /SC â 70
CollectorâEmitter Voltage
CollectorâBase Voltage
EmitterâBase Voltage
Collector Current â Continuous
V CEO
V
CBO
V EBO
IC
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FRâ 5 Board,
TA = 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
40
Vdc
75
Vdc
6.0
Vdc
600
mAdc
Symbol
PD
RθJA
TJ , Tstg
Max
150
833
â55 to +150
Unit
mW
°C/W
°C
1
BASE
3
COLLECTOR
2
EMITTER
DEVICE MARKING
LMBT2222AWT1G S-LMBT2222AWT1G = P1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
CollectorâEmitter Breakdown Voltage (1)
(I C = 10 mAdc, I B = 0)
V (BR)CEO
40
CollectorâBase Breakdown Voltage
(I C = 10 µAdc, I E = 0)
V (BR)CBO
75
EmitterâBase Breakdown Voltage
(I E = 10 µAdc, I C = 0)
V (BR)EBO
6.0
Base Cutoff Current
(V CE = 60 Vdc, V EB = 3.0 Vdc)
I BL
â
Collector Cutoff Current
(V = 60 Vdc, V = 3.0 Vdc)
I CEX
â
CE
EB
1. Pulse Test: Pulse Width<300 µs, Duty Cycle<2.0%.
Max
Unit
â
Vdc
â
Vdc
â
Vdc
20
nAdc
10
nAdc
Rev.O 1/3
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