LMBD301LT1G_15 Datasheet, PDF (1/3 Pages) Leshan Radio Company – Silicon Hot–Carrier Diodes

LESHAN RADIO COMPANY, LTD.
Silicon Hot–Carrier Diodes
Schottky Barrier Diodes
These devices are designed primarily for high–efficiency UHF and VHF detector
applications.They are readily adaptable to many other fast switching RF and digital
applications.They are supplied in an inexpensive plastic package for low–cost,
high–volume consumer and industrial/commercial requirements.They are also
available in a Surface Mount package.
• EXtremely Low Minority Carrier Lifetime –15ps(Typ)
• Very Low Capacitance –1.5pF(Max)@VR=15V
• Low Reverse Leakage –IR=13 nAdc(Typ) LMBD301
• We declare that the material of product
compliance with RoHS requirements.
• S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
3
CATHODE
1
ANODE
LMBD301LT1G
S-LMBD301LT1G
3
1
2
SOT–23
MAXIMUM RATINGS(T_J=125°C unless otherwise noted)
Rating
Reverse Voltage
Forward Power Dissipation
@TA=25 °C
Derate above 25 °C
Operating Junction
Temperature Range
Storage Temperature Range
symbol
VR
PF
TJ
T stg
value
30
280
200
2.8
2.0
–55 to +125
–55 to +150
unit
Volts
mW
mW/ °C
°C
°C
DEVICE MARKING
LMBD301LT1G= 4T
ELECTRICAL CHARACTERISTICS(TA=25 °C unless otherwise noted)
Characteristic
Symbol
Min
Reverse Breakdown Voltage(IR=10µA)
V (BR)R
30
Total Capacitance(VR=15V,f=1.0MHz,)Figure1
CT
—
Reverse Leakage(VR=25V)Figure3
IR
—
Forward Voltage(IF=1.0mAdc)Figure4
VF
—
Forward Voltage(IF=10mAdc)Figure4
VF
—
Typ
—
0.9
13
0.38
0.52
Max
—
1.5
200
0.45
0.6
Unit
Volts
pF
nAdc
Vdc
Vdc
NOTE:LMBD301LT1G is also available in bulk packaging.Use LMBD301LT1G as the device title to order this device in bulk.
Ordering Information
Device
LMBD301LT1G
S-LMBD301LT1G
LMBD301LT3G
S-LMBD301LT3G
Marking
4T
4T
Shipping
3000/Tape&Reel
10000/Tape&Reel
Rev.O 1/3