LMBD301LT1 Datasheet, PDF (1/3 Pages) Leshan Radio Company – Silicon Hot-Carrier Diodes Schottky Barrier Diodes

LESHAN RADIO COMPANY, LTD.
Silicon Hot–Carrier Diodes
Schottky Barrier Diodes
These devices are designed primarily for high–efficiency UHF and VHF detector
applications.They are readily adaptable to many other fast switching RF and digital
applications.They are supplied in an inexpensive plastic package for low–cost,
high–volume consumer and industrial/commercial requirements.They are also
available in a Surface Mount package.
• EXtremely Low Minority Carrier Lifetime –15ps(Typ)
• Very Low Capacitance –1.5pF(Max)@VR=15V
• Low Reverse Leakage –IR=13 nAdc(Typ) LMBD301
3
CATHODE
1
ANODE
LMBD301LT1
3
1
2
SOT–23
MAXIMUM RATINGS(TJ=125°C unless otherwise noted)
LBD301 LMBD301LT1
Rating
symbol
value
unit
Reverse Voltage
VR
30
Volts
Forward Power Dissipation
PF
@TA=25 °C
280
200
mW
Derate above 25 °C
2.8
2.0
mW/ °C
Operating Junction
TJ
°C
Temperature Range
–55 to +125
Storage Temperature Range
T stg
–55 to +150
°C
DEVICE MARKING
LMBD301LT1=4T
ELECTRICAL CHARACTERISTICS(TA=25 °C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Reverse Breakdown Voltage(IR=10µA)
V (BR)R
30
—
Total Capacitance(VR=15V,f=1.0MHz,)Figure1
CT
—
0.9
Reverse Leakage(VR=25V)Figure3
IR
—
13
Forward Voltage(IF=1.0mAdc)Figure4
VF
—
0.38
Forward Voltage(IF=10mAdc)Figure4
VF
—
0.52
Max
—
1.5
200
0.45
0.6
Unit
Volts
pF
nAdc
Vdc
Vdc
NOTE:LMBD301LT1 is also available in bulk packaging.Use LMBD301L as the device title to order this device in bulk.
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