LIMN10T1G_15 Datasheet, PDF (1/3 Pages) Leshan Radio Company – Switching Diode

LESHAN RADIO COMPANY, LTD.
Switching Diode
!Applications
Ultra high speed switching
!Features
1) Multiple diodes in one small surface mount package.
2) Diode characteristics are matched in the package.
3) Pb−Free Package is Available.
4)S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
!Construction
Silicon epitaxial planar
LIMN10T1G
S-LIMN10T1G
6
5
4
1
2
3
TSOP-6
6
5
4
!Device Marking Ordering Information
Device
LIMN10T1G
S-LIMN10T1G
LIMN10T3G
S-LIMN10T3G
Marking
N10
N10
Shipping
3000 Tape&Reel
10000 Tape&Reel
1
2
3
!Absolute maximum ratings (Ta=25°C)
Parameter
Peak reverse voltage
DC reverse voltage
Peak forward current
Mean rectifying current
Surge current (1us)
Power dissipation (total)
Junction temperature
Storage temperature
Symbol
V_RM
V_R
I _FM
I_O
I _surge
Pd
Tj
T_stg
∗1 Not to exceed 200mW per element.
!Electrical characteristics (Ta=25°C)
Parameter
Symbol
Forward voltage
VF
Reverse current
IR
Capacitance between terminals CT
Reverse recovery time
trr
Limits
Unit
80
V
80
V
300
mA
100
mA
4
A
300 ^∗1
mW
150
°C
– 55 ~ +150
°C
Min. Typ. Max. Unit
Conditions
–
–
1.2
V
I F=100mA
–
–
0.1
µA
VR=70V
–
–
3.5
pF
VR=6V , f=1MHz
–
–
4
ns
VR=6V , IF=5mA
.
Rev.O 1/3