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LDTDG12GPLT1G_15 Datasheet, PDF (1/3 Pages) Leshan Radio Company – Bias Resistor Transistor | |||
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LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
LDTDG12GPLT1G
zApplications
Driver
zFeatures
1) High hFE.
300 (Min.) (VCE / IC=2V / 0.5A)
2) Low saturation voltage,
(VCE(sat)=0.4V at IC / IB=500mA / 5mA)
3) Built-in zener diode gives strong protection against
reverse surge by L- load (an inductive load).
⢠We declare that the material of product compliance with
RoHS requirements.
zStructure
NPN epitaxial planar silicon transistor
(with built-in resistor and zener diode)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
60±10
V
Collector-emitter voltage
VCEO
60±10
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
1
A
ICP
2 â1
A
Collector power dissipation
PC
0.5
W
2 â2
Junction temperature
Tj
150
°C
Storage temperature
Tstg
â55 to +150
°C
â1 Pwâ¤10ms, Duty cycleâ¤1/2
â2 When mounted on a 40Ã40Ã0.7 mm ceramic board.
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
3
1
2
SOT-23
R1
1
BASE R
3
COLLECTOR
R=10kâ¦
2
EMITTER
LDTDG12GPLT1G
Q7
1
22
3000/Tape & Reel
LDTDG12GPLT3G
Q7
1
22
10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Emitter-base resistance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R
Min.
50
50
5
â
300
â
300
7
Transition frequency
fT â
â
â Characteristics of built-in transistor
Typ.
â
â
â
â
â
â
â
10
80
Max.
70
70
â
0.5
580
0.4
â
13
â
Unit
V
V
V
µA
µA
V
â
kâ¦
MHz
Conditions
IC=50µA
IC=1mA
IE=720µA
VCB=40V
VEB=4V
IC/IB=500mA/5mA
VCE=2V, IC=500mA
â
VCE=5V, IE=â0.1A, f=30MHz
1/3
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