LDTD143TLT1G_15 Datasheet, PDF (1/3 Pages) Leshan Radio Company – Bias Resistor Transistor

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
• S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
40
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
500
mA
Collector power dissipation
PC
200
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
−55 to +150
C
LDTD143TLT1G
S-LDTD143TLT1G
3
1
2
SOT-23
R1
1
BASE
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTD143TLT1G
S-LDTD143TLT1G
E2
LDTD143TLT3G
S-LDTD143TLT3G
E2
4.7
_
3000/Tape & Reel
4.7
_
10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO 50
Collector-emitter breakdown voltage BVCEO 40
Emitter-base breakdown voltage
BVEBO 5
Collector cutoff current
ICBO
−
Emitter cutoff current
IEBO
−
Collector-emitter saturation voltage VCE(sat) −
DC current transfer ratio
hFE 100
Input resistance
R1 3.29
Transition frequency
∗ Characteristics of built-in transistor
fT ∗ −
Typ.
−
−
−
−
−
−
250
4.7
200
Max. Unit
Conditions
−
V IC=50µA
−
V IC=1mA
−
V IE=50µA
0.5 µA VCB=50V
0.5 µA VEB=4V
0.3 V IC/IB=50mA/2.5mA
600 − VCE=5V, IC=50mA
6.11 kΩ
−
− MHz VCE=10V, IE= −50mA, f=100MHz
Rev.O 1/3