LDTD123YLT1G_15 Datasheet, PDF (1/3 Pages) Leshan Radio Company – Bias Resistor Transistor

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
• S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
VCC
VIN
IC
Pd
Tj
Tstg
50
V
−5 to +12
V
500
mA
200
mW
150
C
−55 to +150
C
LDTD123YLT1G
S-LDTD123YLT1G
3
1
2
SOT–23
R1
1
BASE R2
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTD123YLT1G
S-LDTD123YLT1G
F62
LDTD123YLT3G
S-LDTD123YLT3G
F62
2.2
10
3000/Tape & Reel
2.2
10
10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Input voltage
VI(off)
−
VI(on)
2
−
0.3
VCC=5V, IO=100µA
V
−
−
VO=0.3V, IO=20mA
Output voltage
VO(on)
−
0.1 0.3
V IO/II=50mA/2.5mA
Input current
II
−
−
3.6 mA VI=5V
Output current
IO(off)
−
−
0.5 µA VCC=50V, VI=0V
DC current gain
GI
56
−
−
− VO=5V, IO=50mA
Input resistance
R1
1.54 2.2 2.86 kΩ
−
Resistance ratio
R2/R1 3.6 4.5 5.5
−
−
Transition frequency
∗Transition frequency of the device
fT
−
200
− MHz VCE=10V, IE= −50mA, f=100MHz
∗
Rev.O 1/3