LDTD123ELT1G_15 Datasheet, PDF (1/3 Pages) Leshan Radio Company – Bias Resistor Transistor

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
• S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Supply voltage
VCC
Input voltage
VIN
Output current
IC
Power dissipation
Pd
Junction temperature
Tj
Storage temperature
Tstg
50
V
−10 to +12
V
500
mA
200
mW
150
C
−55 to +150
C
LDTD123ELT1G
S-LDTD123ELT1G
3
1
2
SOT-23
R1
1
BASE R2
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTD123ELT1G
S-LDTD123ELT1G
F22
LDTD123ELT3G
S-LDTD123ELT3G
F22
2.2
2.2 3000/Tape & Reel
2.2
2.2 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
∗Characteristics of built-in transistor.
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
fT ∗
Min.
−
3
−
−
−
39
1.54
0.8
−
Typ.
−
−
0.1
−
−
−
2.2
1
200
Max.
0.5
−
0.3
3.8
0.5
−
2.86
1.2
−
Unit
V
V
mA
µA
−
kΩ
−
MHz
Conditions
VCC=5V, IO=100µA
VO=0.3V, IO=20mA
IO/II=50mA/2.5mA
VI=5V
VCC=50V, VI=0V
VO=5V, IO=50mA
−
−
VCE=10V, IE= −50mA, f=100MHz
Rev.O 1/3