LDTD114GLT1G_15 Datasheet, PDF (1/3 Pages) Leshan Radio Company – Bias Resistor Transistor

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
• S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Limits
Unit
VCBO
50
V
VCEO
50
V
VEBO
5
V
IC
500
mA
PC
200
mW
Tj
150
C
Tstg
−55 to +150
C
LDTD114GLT1G
S-LDTD114GLT1G
3
1
2
SOT-23
1
BASE R2
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTD114GLT1G
S-LDTD114GLT1G
E7
LDTD114GLT3G
S-LDTD114GLT3G
E7
_
10
3000/Tape & Reel
_
10
10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Emitter-base resistance
Transition frequency
∗ Characteristics of built-in transistor.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R2
fT ^∗
Min.
50
50
5
−
300
−
56
7
−
Typ.
−
−
−
−
−
−
−
10
200
Max.
−
−
−
0.5
580
0.3
−
13
−
Unit
V
V
V
µA
µA
V
−
kΩ
MHz
Conditions
IC=50µA
IC=1mA
IE=720µA
VCB=50V
VEB=4V
IC/IB=50mA / 2.5mA
IC=50mA , VCE=5V
−
VCE=10V , IE= −50mA , f =100MHz
Rev.O 1/3