LDTC144GET1G_15 Datasheet, PDF (1/3 Pages) Leshan Radio Company – ias Resistor Transistor

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
LDTC144GET1G
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector ^DTC144GE
Power
DTC144GUA / DTC144GKA
dissipation _DTC144GSA
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
Pc
Tj
Tstg
Limits
50
50
5
100
150
200
300
150
−55 to +150
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTC144GET1G
L1
_
47
3000/Tape & Reel
LDTC144GET3G
L1
_
47
10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Emitter-base resistance
Transition frequency
∗ Transition frequency of the device.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R
fT
Min.
50
50
5
−
65
−
68
32.9
−
Typ.
−
−
−
−
−
−
−
47
250
Max.
−
−
−
0.5
130
0.3
−
61.1
−
3
1
2
SC-89
R1
1
BASE R2
Unit
V
V
V
mA
mW
C
C
3
COLLECTOR
2
EMITTER
Unit
V
V
V
µA
µA
V
−
kΩ
MHz
Conditions
IC=50µA
IC=1mA
IE=160µA
VCB=50V
VEB=4V
IC=10mA , IB=0.5mA
IC=5mA , VCE=5V
−
VCE=10V , IE= −5mA , f=100MHz ∗
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