LDTC143XET1G_15 Datasheet, PDF (1/3 Pages) Leshan Radio Company – Bias Resistor Transistor

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
LDTC143XET1G
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
VCC
VIN
IC
PD
Tj
Tstg
50
V
− 7 to +20
V
100
mA
200
mW
150
C
−55 to +150
C
3
1
2
SC-89
R1
1
BASE R2
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTC143XET1G
M1
4.7
10
3000/Tape & Reel
LDTC143XET3G
M1
4.7
10
10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Input voltage
VI(off)
VI(on)
Output voltage
VO(on)
Input current
II
Output current
IO(off)
DC current gain
GI
Input resistance
R1
Resistance ratio
R2/R1
Transition frequency
fT ∗
∗ Characteristics of built-in transistor
Min.
−
2.5
−
−
−
30
3.29
1.7
−
Typ.
−
−
0.1
−
−
−
4.7
2.1
250
Max.
0.3
−
0.3
1.8
0.5
−
6.11
2.6
−
Unit
V
V
mA
µA
−
kΩ
−
MHz
Conditions
VCC=5V, IO=100µA
VO=0.3V, IO=20mA
IO/II=10mA/0.5mA
VI=5V
VCC=50V, VI=0V
VO=5V, IO=10mA
−
−
VCE=10V, IE=−5mA, f=100MHz
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