LDTC143ELT1G Datasheet, PDF (1/3 Pages) Leshan Radio Company – Bias Resistor Transistor

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
LDTC143ELT1G
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
VCC
VIN
IC
PD
Tj
Tstg
50
V
−10 to +10
V
100
mA
200
mW
150
C
−55 to +150
C
3
1
2
SOT–23
R1
1
BASE R2
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTB113ELT1G
N2
4.7
4.7 3000/Tape & Reel
LDTB113ELT3G
N2
4.7
4.7 ^{10000/Tape & Reel}
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Input voltage
Output voltage
Input current
Output current
VI(off)
−
VI(on)
3
VO(on)
−
II
−
IO(off)
−
DC current gain
GI
30
Input resistance
R1 3.29
Resistance ratio
R2/R1 0.8
Transition frequency
fT ∗ −
∗ Characteristics of built-in transistor
Typ.
−
−
0.1
−
−
−
4.7
1
250
Max. Unit
0.5
V
−
V
0.3
V
1.8 mA
0.5 µA
−
−
6.11
1.2
−
kΩ
−
MHz
Conditions
VCC=5V, IO=100µA
VO=0.3V, IO=20mA
IO/II=10mA/0.5mA
VI=5V
VCC=50V, VI=0V
VO=5V, IO=10mA
−
−
VCE=10V, IE= −5mA, f=100MHz
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