LDTC124TET1G_15 Datasheet, PDF (1/3 Pages) Leshan Radio Company – Bias Resistor Transistor

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Limits
Unit
VCBO
50
V
VCEO
50
V
VEBO
5
V
IC
100
mA
Pc
200
mW
Tj
150
C
Tstg
−55 to +150
C
LDTC124TET1G
3
1
2
SC-89
R1
1
BASE
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTC124TET1G
H4
22
3000/Tape & Reel
LDTC124TET3G
H4
22
10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO 50 ^−
−
V IC=50µA
Collector-emitter breakdown voltage BVCEO 50 ^−
−
V IC=1mA
Emitter-base breakdown voltage
BVEBO 5
−
−
V IE=50µA
Collector cutoff current
ICBO
−
− 0.5 µA VCB=50V
Emitter cutoff current
IEBO
−
− 0.5 µA VEB=4V
Collector-emitter saturation voltage VCE(sat) −
− 0.3 V IC/IB=5mA/0.5mA
DC current transfer ratio
hFE 100 250 600 − VCE=5V, IC=1mA
Input resistance
R1 15.4 22 28.6 kΩ
−
Transition frequency
∗ Characteristics of built-in transistor
fT ∗ − 250 − MHZ VCE=10V, IE=−5mA, f=100MHZ
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