LDTC124GET1G_15 Datasheet, PDF (1/3 Pages) Leshan Radio Company – Bias Resistor Transistor

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Limits
Unit
VCBO
50
V
VCEO
50
V
VEBO
5
V
IC
100
mA
Pc
200
mW
Tj
150
C
Tstg
−55 to +150
C
LDTC124GET1G
3
1
2
SC-89
1
BASE R2
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTC124GET1G
N9
22
3000/Tape & Reel
LDTC124GET3G
N9
22
10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Emitter-base resistance
Transition frequency
∗ ^{Transition frequency of the device.}
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R
fT
Min.
50
50
5
−
140
−
56
15.4
−
Typ.
−
−
−
−
−
−
−
22
250
Max.
−
−
−
0.5
260
0.3
−
28.6
−
Unit
V
V
V
µA
µA
V
−
kΩ
MHz
Conditions
IC= 50µA
IC= 1mA
IE= 330µA
VCB= 50V
VEB= 4V
IC= 10mA , IB= 0.5mA
IC= 5mA , VCE= 5V
−
VCE= 10V , IE= −5mA , f= 100MHz ∗
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