LDTC114EM3T5G_15 Datasheet, PDF (1/14 Pages) Leshan Radio Company – Bias Resistor Transistors

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistors
NPN Silicon Surface Mount Transistors _{LDTC114EM3T5G Series}
With Monolithic Bias Resistor Network ^{S-LDTC114EM3T5G Series}
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
3
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by integrating
them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SOT-723 package
2
which is designed for low power surface mount applications.
1
ƽSimplifies Circuit Design
ƽReduces Board Space
SOT-723
ƽReduces Component Count
ƽThe SOT-723 Package can be Soldered using Wave or Reflow.
ƽAvailable in 4 mm, 8000 Unit Tape & Reel
ƽThese are Pb-Free Devices.
ƽS- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
PIN 1
R1
BASE
(INPUT) _R2
MAXIMUM RATINGS (T_A = 25°C unless otherwise noted)
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V_CBO
50
Collector-Emitter Voltage
V_CEO
50
Collector Current
I_C
100
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Vdc
Vdc
mAdc
Unit
MARKING DIAGRAM
3
XX M
Total Device Dissipation
T_A = 25°C
Derate above 25°C
Thermal Resistance –
Junction-to-Ambient
P_D
R_θJA
260 (Note 1)
600 (Note 2)
2.0 (Note 1)
4.8 (Note 2)
480 (Note 1)
205 (Note 2)
mW
mW/°C
°C/W
12
xx = Specific Device Code
M = Date Code
Junction Temperature
T_J
150
°C
Storage Temperature Range
Tstg
–55 to +150
°C
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
Rev.O 1/14