LDTC113ZET1G_15 Datasheet, PDF (1/3 Pages) Leshan Radio Company – Bias Resistor Transistor

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
• S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
zAbsolute maximum ratings (Ta=25°C)
Limits
Parameter
Symbol
Unit
LDTC113ZET1G
Supply voltage
VCC
50
V
Input voltage
VIN
−5 to +10
V
IO
100
Output current
mA
IC(Max.)
100
Power dissipation
PD
200
mW
Junction temperature Tj
150
°C
Storage temperature Tstg
−55 to +150
°C
LDTC113ZET1G
S-LDTC113ZET1G
3
2
1
SC-89
R1
1
BASE R2
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTC113ZET1G
S-LDTC113ZET1G
N7
LDTC113ZET3G
S-LDTC113ZET3G
N7
1
10
3000/Tape & Reel
1
10
10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
∗ Characteristics of built-in transistor
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
fT ∗
Min.
−
3
−
−
−
33
0.7
8
−
Typ.
−
−
0.1
−
−
−
1
10
250
Max.
0.3
−
0.3
7.2
0.5
−
1.3
12
−
Unit
V
V
mA
µA
−
kΩ
−
MHz
Conditions
VCC=5V, IO=100µA
VO=0.3V, IO=20mA
IO/II=10mA/0.5mA
VI=5V
VCC=50V, VI=0V
VO=5V, IO=5mA
−
−
VCE=10V, IE= −5mA, f=100MHz
Rev.O 1/3