LDTBG12GPLT1G_15 Datasheet, PDF (1/3 Pages) Leshan Radio Company – Bias Resistor Transistor

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
LDTBG12GPLT1G
zApplications
Driver
zFeatures
1) High hFE.
300 (Min.) (VCE / IC=2V / 0.5A)
2) Low saturation voltage,
(VCE(sat)=0.4V at IC / IB=500mA / 5mA)
3) Built-in zener diode gives strong protection against
reverse surge by L- load (an inductive load).
• We declare that the material of product compliance with
RoHS requirements.
zStructure
NPN epitaxial planar silicon transistor
(with built-in resistor and zener diode)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
-60±10
V
Collector-emitter voltage
VCEO
-60 ±10
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-1
A
ICP
-2 ∗1
A
Collector power dissipation
PC
0.5
W
2 ∗2
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
∗1 Pw≤10ms, Duty cycle≤1/2
∗2 When mounted on a 40×40×0.7 mm ceramic board.
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
3
1
2
SOT-23
R1
1
BASE R
3
COLLECTOR
R=10kΩ
2
EMITTER
LDTBG12GPLT1G
Q8
1
22
3000/Tape & Reel
LDTBG12GPLT3G
Q8
1
22
10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Emitter-base resistance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R
Min.
-50
-50
-5
−
-300
−
300
7
Transition frequency
fT ∗
−
∗ Characteristics of built-in transistor
Typ.
−
−
−
−
−
−
−
10
80
Max.
-70
-70
−
-0.5
-580
-0.4
−
13
−
Unit
V
V
V
µA
µA
V
−
kΩ
MHz
Conditions
IC=-50µA
IC=-1mA
IE=-720µA
VCB=-40V
VEB=-4V
IC/IB=-500mA/-5mA
VCE=-2V, IC=-500mA
−
VCE=-5V, IE=−-0.1A, f=-30MHz
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