LDTB143TLT1G_15 Datasheet, PDF (1/3 Pages) Leshan Radio Company – Bias Resistor Transistor

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on / off conditions need to be set for operation,
making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
• S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
−50
V
Collector-emitter voltage
VCEO
−40
V
Emitter-base voltage
VEBO
−5
V
Collector current
IC
−500
mA
Collector power dissipation
PC
200
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
−55 to +150
C
LDTB143TLT1G
S-LDTB143TLT1G
3
1
2
SOT-23
R1
1
BASE
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTB143TLT1G
S-LDTB143TLT1G
K2
4.7
LDTB143TLT3G
S-LDTB143TLT3G
K2
4.7
3000/Tape & Reel
10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage
BVCBO −50 −
−
V IC= −50µA
Collector-emitter breakdown voltage BVCEO −40 −
−
V IC= −1mA
Emitter-base breakdown voltage
BVEBO −5 −
−
V IE= −50µA
Collector cutoff current
ICBO
−
− −0.5 µA VCB= −50V
Emitter cutoff current
IEBO
− − −0.5 µA VEB= −4V
Collector-emitter saturation voltage VCE(sat) − − −0.3 V IC/IB= −50mA/−2.5mA
DC current transfer ratio
hFE 100 250 600 − VCE= −5V, IC= −50mA
Input resistance
R1 3.29 4.7 6.11 kΩ
−
Transition frequency
∗ Characteristics of built-in transistor
fT ∗ − 200 − MHz VCE= −10V, IE=50mA, f=100MHz
Rev.O 1/3