LDTB123YLT1G_15 Datasheet, PDF (1/3 Pages) Leshan Radio Company – Bias Resistor Transistor

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on / off conditions need to be set for operation,
making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
• S- Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC-Q101 Qualified and
PPAP Capable
zAbsolute maximum ratings (Ta=25°C)
Limits
Parameter
Symbol
Unit
Supply voltage
VCC
−50
V
Input voltage
VIN
−12 to +5
V
Output current
IC
−500
mA
Power dissipation
Junction temperature
Storage temperature
PD
Tj
Tstg
200
mW
150
C
−55 to +150
C
LDTB123YLT1G
S-LDTB123YLT1G
3
1
2
SOT-23
R1
1
BASE R2
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTB123YLT1G
F52
2.2
S-LDTB123YLT1G
LDTB123YLT3G
F52
2.2
S-LDTB123YLT3G
zElectrical characteristics (Ta=25°C)
10
3000/Tape & Reel
10
10000/Tape & Reel
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
∗ Transition frequency of the device
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
fT
Min.
−
−2
−
−
−
56
1.54
3.6
−
Typ.
−
−
−0.1
−
−
−
2.2
4.5
200
Max.
−0.3
−
−0.3
−3.0
−0.5
−
2.86
5.5
−
Unit
V
V
mA
µA
−
kΩ
−
MHz
Conditions
VCC= −5V, IO= −100µA
VO= −0.3V, IO= −20mA
IO/II= −50mA/−2.5mA
VI= −5V
VCC= −50V, VI= 0V
VO= −5V, IO= −50mA
−
−
VCE= −10V, IE= 50mA, f= 100MHz ∗
Rev.O 1/3