LDTB114TLT1G_15 Datasheet, PDF (1/3 Pages) Leshan Radio Company – Bias Resistor Transistor

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on / off conditions need to be set for operation,
making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
• S - Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
−50
V
Collector-emitter voltage
VCEO
−40
V
Emitter-base voltage
VEBO
−5
V
Collector current
IC
−500
mA
Collector power dissipation
PC
200
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
−55 to +150
C
LDTB114TLT1G
S-LDTB114TLT1G
3
1
2
SOT-23
1
BASE ^R1
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTB114TLT1G
S-LDTB114TLT1G
K3
10
LDTB114TLT3G
K3
S-LDTB114TLT3G
10
3000/Tape & Reel
10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff curren
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
∗ ^{Characteristics of built-in transistor}
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R1
fT ∗
Min.
−50
−40
−5
−
−
−
100
7
−
Typ.
−
−
−
−
−
−
250
10
200
Max.
−
−
−
−0.5
−0.5
−0.3
600
13
−
Unit
V
V
V
µA
µA
V
−
kΩ
MHz
Conditions
IC= −50µA
IC= −1mA
IE= −50µA
VCB= −50V
VEB= −4V
IC/IB= −50mA/−2.5mA
IC= −50mA , VCE= −5V
−
VCE= −10V , IE=50mA , f=100MHz
Rev.O 1/3