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LDTB114ELT1G_15 Datasheet, PDF (1/3 Pages) Leshan Radio Company – Bias Resistor Transistor | |||
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LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
⢠Applications
Inverter, Interface, Driver
⢠Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on / off conditions need to be set for operation,
making the device design easy.
⢠We declare that the material of product compliance with
RoHS requirements.
⢠S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
zAbsolute maximum ratings (Ta=25°C)
Limits
Parameter
Symbol
Unit
Supply voltage
VCC
Input voltage
VIN
Output current
IC
â50
V
â40 to +10
V
â500
mA
Power dissipation
Junction temperature
Storage temperature
PD
Tj
Tstg
200
mW
150
C
â55 to +150
C
LDTB114ELT1G
S-LDTB114ELT1G
3
1
2
SOT-23
R1
1
BASE R2
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTB114ELT1G
S-LDTB114ELT1G
F14
LDTB114ELT3G
S-LDTB114ELT3G
F14
10
10
3000/Tape & Reel
10
10
10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Input voltage
Output voltage
Input current
Output current
DC current gain
VI(off)
â
VI(on)
â3
VO(on)
â
II
â
IO(off)
â
GI
56
Input resistance
R1
7
Resistance ratio
R2/R1 0.8
Transition frequency
fT â â
â Characteristics of built-in transistor
Typ.
â
â
â0.1
â
â
â
10
1
200
Max.
â0.5
â
â0.3
â0.88
â0.5
â
13
1.2
â
Unit
V
V
mA
µA
â
kâ¦
â
MHz
Conditions
VCC= â5V, IO= â100µA
VO= â0.3V, IO= â10mA
IO/II= â50mA/â2.5mA
VI= â5V
VCC= â50V, VI=0V
VO= â5V, IO= â50mA
â
â
VCE= â10V, IE=50mA, f=100MHz
Rev.O 1/3
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