LDTB113ZLT1G_15 Datasheet, PDF (1/3 Pages) Leshan Radio Company – Bias Resistor Transistor

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
• S - Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
VCC
VIN
IC
PD
Tj
Tstg
−50
V
−10 to +5
V
−500
mA
200
mW
150
C
−55 to +150
C
LDTB113ZLT1G
S-LDTB113ZLT1G
3
1
2
SOT-23
R1
1
BASE R2
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTB113ZLT1G
S-LDTB113ZLT1G
K8
LDTB113ZLT3G
S-LDTB113ZLT3G
K8
1
10
3000/Tape & Reel
1
10
10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Input voltage
VI(off)
−
VI(on)
−3
Output voltage
VO(on)
−
Input current
II
−
Output current
IO(off)
−
DC current gain
GI
56
Input resistance
R1
0.7
Resistance ratio
R2/R1
8
Transition frequency
fT
−
∗ Transition frequency of the device
Typ. Max.
− −0.3
−
−
− −0.3
− −7.2
− −0.5
−
−
1 1.3
10 12
200 −
Unit
V
V
mA
µA
−
kΩ
−
MHz
Conditions
VCC= −5V, IO= −100µA
VO= −0.3V, IO= −20mA
IO/II= −50mA/−2.5mA
VI= −5V
VCC= −50V, VI=0V
VO= − 5V, IO= −50mA
−
−
VCE= −10V, IE=50mA, f=100MHz ^∗
Rev.O 1/3