LDTB113ELT1G_15 Datasheet, PDF (1/3 Pages) Leshan Radio Company – Bias Resistor Transistor

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
• S - Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
VCC
VIN
IC
PD
Tj
Tstg
−50
V
−10 to +10
V
−500
mA
200
mW
150
C
−55 to +150
C
LDTB113ELT1G
S-LDTB113ELT1G
3
1
2
SOT–23
R1
1
BASE R2
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTB113ELT1G
S-LDTB113ELT1G
K4
LDTB113ELT3G
S-LDTB113ELT3G
K4
1
1
3000/Tape & Reel
1
1
10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Input voltage
VI(off)
−
VI(on)
−3
Output voltage
VO(on)
−
Input current
II
−
Output current
IO(off)
−
DC current gain
GI
33
Input resistance
R1
0.7
Resistance ratio
R2/R1 0.8
Transition frequency
fT ∗ −
∗ Characteristics of built-in transistor
Typ.
−
−
−0.1
−
−
−
1
1
200
Max.
−0.5
−
−0.3
−7.2
−0.5
−
1.3
1.2
−
Unit
V
V
V
mA
µA
−
kΩ
−
MHz
Conditions
VCC= −5V, IO= −100µA
VO= −0.3V, IO= −20mA
IO/II= −50mA/−2.5mA
VI= −5V
VCC= −50V, VI= 0V
VO= −5V, IO= −50mA
−
−
VCE= −10V, IE= 50mA, f= 100MHz
Rev.O 1/3