LDTA144TET1G_15 Datasheet, PDF (1/3 Pages) Leshan Radio Company – Bias Resistor Transistor

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
LDTA144TET1G
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
3
1
2
SC-89
• We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
R1
1
BASE
3
COLLECTOR
Parameter
Symbol
Limits
Unit
2
EMITTER
Collector-base voltage
VCBO
−50
V
Collector-emitter voltage
VCEO
−50
V
Emitter-base voltage
VEBO
−5
V
Collector current
IC
−100
mA
Collector power dissipation
Pc
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTA144TET1G
O7
47
3000/Tape & Reel
LDTA144TET3G
O7
47
10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
∗ Characteristics of built-in transistor
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R1
fT ∗
Min.
−50
−50
−5
−
−
−
100
32.9
−
Typ.
−
−
−
−
−
−
250
47
250
Max.
−
−
−
−0.5
−0.5
−0.3
600
61.1
−
Unit
V
V
V
µA
µA
V
−
kΩ
MHz
Conditions
IC=−50µA
IC=−1mA
IE=−50µA
VCB=−50V
VEB=−4V
IC/IB=−5mA/−0.5mA
VCE=−5V, IC=−1mA
−
VCE=−10V, IE=5mA, f=100MHz
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