LDTA144GET1G_15 Datasheet, PDF (1/3 Pages) Leshan Radio Company – Bias Resistor Transistor

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
−50
V
Collector-emitter voltage
VCEO
−50
V
Emitter-base voltage
VEBO
−5
V
Collector current
IC
−100
mA
Collector power dissipation
Pc
200
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
−55 to +150
C
LDTA144GET1G
3
1
2
SC-89
1
BASE _R2
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTA144GET1G
Q3
47
3000/Tape & Reel
LDTA144GET3G
Q3
47
10000/Tape & Reel
zElectrical characteristics (T 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Emitter-base resistance
Transition frequency
∗ Transition frequency of the device.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R
fT
Min.
−50
−50
−5
−
−65
−
68
32.9
−
Typ.
−
−
−
−
−
−
−
47
250
Max.
−
−
−
−0.5
−130
−0.3
−
61.1
−
Unit
V
V
V
µA
µA
V
−
kΩ
MHz
Conditions
IC= −50µA
IC= −1mA
IE= −160µA
VCB= −50V
VEB= −4V
IC= −10mA , IB= −0.5mA
IC= −5mA , VCE= −5V
−
∗ ^{VCE= −10V , IE=5mA , f=100MHz}
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