LDTA143XET1G_15 Datasheet, PDF (1/3 Pages) Leshan Radio Company – Bias Resistor Transistor

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
LDTA143XET1G
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
3
1
2
SC-89
R1
1
BASE R2
3
COLLECTOR
Limits
Parameter
Symbol
Unit
2
EMITTER
Supply voltage
VCC
−50
V
Input voltage
VI
−20 to +7
V
IO
−100
Output current
mA
IC(Max.)
−100
Power dissipation
Pd
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTA143XET1G
P10
4.7
10
3000/Tape & Reel
LDTA143XET3G
P10
4.7
10
10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
∗ ^{Characteristics of built-in transistor}
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
fT ∗
Min.
−
−2.5
−
−
−
30
3.29
1.7
−
Typ.
−
−
−0.1
−
−
−
4.7
2.1
250
Max.
−0.3
−
−0.3
−1.8
−0.5
−
6.11
2.6
−
Unit
V
V
mA
µA
−
kΩ
−
MHz
Conditions
VCC=−5V, IO=−100µA
VO=−0.3V, IO=−20mA
IO/II=−10mA/−0.5mA
VI=−5V
VCC=−50V, VI=0V
VO=−5V, IO=−10mA
−
−
VCE=−10V, IE=5mA, f=100MHz
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