LDTA123YET1G_15 Datasheet, PDF (1/3 Pages) Leshan Radio Company – Bias Resistor Transistor

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Limits
Parameter
Symbol
Unit
LDTA123YET1G
Supply voltage
VCC
−50
V
Input voltage
VIN
−12 to +5
V
IO
−100
Output current
mA
IC(Max.)
−100
Power dissipation
PD
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
LDTA123YET1G
3
1
2
SC-89
R1
1
BASE R2
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTA123YET1G
P8
2.2
10
3000/Tape & Reel
LDTA123YET3G
P8
2.2
10
10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Input voltage
VI(off)
VI(on)
Output voltage
VO(on)
Input current
II
Output current
IO(off)
DC current gain
GI
Input resistance
R1
Resistance ratio
R2/R1
Transition frequency
fT ∗
∗ Characteristics of built-in transistor
Min.
−
−3
−
−
−
33
1.54
3.6
−
Typ. Max.
− −0.3
−
−
−0.1 −0.3
− −3.8
− −0.5
−
−
2.2 2.86
4.5 5.5
250 −
Unit
V
V
mA
µA
−
kΩ
−
MHz
Conditions
VCC=−5V, IO=−100µA
VO=−0.3V, IO=−20mA
IO/II=−10mA/−0.5mA
VI=−5V
VCC=−50V, VI=0V
VO=−5V, IO=−10mA
−
−
VCE=−10V, IE=5mA, f=100MHz
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