LDTA115TET1G_15 Datasheet, PDF (1/3 Pages) Leshan Radio Company – Bias Resistor Transistor

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
VCBO
VCEO
VEBO
Limits
−50
−50
−5
Collector current
IC
−100
Collector Power dissipation
Junction temperature
PC
200
Tj
150
Storage temperature
Tstg
−55 to +150
Unit
V
V
V
mA
mW
°C
°C
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTA115TET1G
O8
100
-
3000/Tape & Reel
LDTA115TET1G
O8
100
-
10000/Tape & Reel
LDTA115TET1G
3
1
2
SC-89
R1
1
BASE
3
COLLECTOR
2
EMITTER
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Collector-base breakdown voltage
BVCBO
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
BVCEO
BVEBO
Collector cutoff current
ICBO
Emitter cutoff current
Collector-emitter saturation voltage
IEBO
VCE(sat)
DC current transfer ratio
hFE
Input resistance
R1
Transition frequency
fT ∗
∗Characteristics of built-in transistor
Min. Typ. Max. Unit
Conditions
−50
−
−
V IC= −50µA
−50
−
−
V IC= −1mA
−5
−
−
V IE= −50µA
−
−
−0.5
µA VCB= −50V
−
−
−0.5
µA VEB= −4V
−
−
−0.3
V IC/IB= −1mA/−0.1mA
100
250
600
−
IC= −1mA , VCE= −5V
70
100
130
kΩ
−
−
250
−
MHZ VCE= −10V , IE=5mA , f=100MHZ
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