LDTA115GET1G_15 Datasheet, PDF (1/3 Pages) Leshan Radio Company – Bias Resistor Transistor

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
−50
V
Collector-emitter voltage
VCEO
−50
V
Emitter-base voltage
VEBO
−5
V
Collector current
IC
−100
mA
Collector power dissipation
Pc
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
LDTA115GET1G
3
1
2
SC-89
1
BASE R2
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTA115GET1G
Q4
−
100
3000/Tape & Reel
LDTA115GET3G
Q4
−
100
10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Emitter-base resistance
Transition frequency
∗ Transition frequency of the device.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R
fT
Min. Typ. Max. Unit
Conditions
−50
−
−
V
IC= −50 µA
−50
−
−
V
IC= −1mA
−5
−
−
V
IE= −72 µA
−
−
−0.5
µA VCB= −50V
−30
−
−58
µA VEB= −4V
−
−
−0.3
V
IC= −5mA, IB= −0.25mA
82
−
−
−
IC= −5mA, VCE= −5V
70
100
130
kΩ
−
−
250
−
MHz VCE= −10V, IE=5mA, f=100MHz ∗
1/3