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LDTA115EM3T5G_15 Datasheet, PDF (1/11 Pages) Leshan Radio Company – PNP Silicon Surface Mount Transistors With Monolithic Bias Resistor Network
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
With Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by integrating
them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SOT-723 package
which is designed for low power surface mount applications.
ƽSimplifies Circuit Design
ƽReduces Board Space
ƽReduces Component Count
ƽThe SOT-723 Package can be Soldered using Wave or Reflow.
ƽAvailable in 4 mm, 8000 Unit Tape & Reel
ƽWe declare that the material of product compliance with
RoHS requirements.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Collector-Base Voltage
VCBO
50
Collector-Emitter Voltage
VCEO
50
Collector Current
IC
100
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD
260 (Note 1)
600 (Note 2)
2.0 (Note 1)
4.8 (Note 2)
Thermal Resistance –
Junction-to-Ambient
RθJA
480 (Note 1)
205 (Note 2)
Junction and Storage
Temperature Range
TJ, Tstg –55 to +150
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
Unit
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
°C
LDTA114EM3T5G
Series
3
2
1
SOT-723
PIN 1
R1
BASE
(INPUT)
R2
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
MARKING DIAGRAM
3
XX M
12
xx = Specific Device Code
M = Date Code
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