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LDTA114WET1G_15 Datasheet, PDF (1/3 Pages) Leshan Radio Company – Bias Resistor Transistor | |||
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LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
zApplications
Inverter, Interface, Driver
zFeatures
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors.
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input,
and parasitic effects are almost completely eliminated.
3) Only the on / off conditions need to be set for operation,
making the device design easy.
4) Higher mounting densities ca.n be achieved.
z We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Supply voltage
Input voltage
Parameter
Output current
Power dissipation
Symbol
VCC
VI
IO
IC(Max.)
PD
Limits
Unit
â50
V
â30 to +10
V
â100
mA
â100
200
mW
Junction temperature
Storage temperature
Tj
Tstg
150
°C
â55 to +150
°C
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTA114WET1G
L6
10
4.7
3000/Tape & Reel
LDTA114WET3G
L6
10
4.7
10000/Tape & Reel
LDTA114WET1G
3
1
2
SC-89
R1
1
BASE R2
3
COLLECTOR
2
EMITTER
zExternal characteristics (Unit: mm)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
â Characteristics of built-in transistor
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
fT â
Min.
â
â3
â
â
â
24
7
0.37
â
Typ.
â
â
â0.1
â
â
â
10
0.47
250
Max.
â0.8
â
â0.3
â0.88
â0.5
â
13
0.57
â
Unit
V
V
mA
µA
â
kâ¦
â
MHz
Conditions
VCC= â5V , IO= â100µA
VO= â0.3V , IO= â2mA
IO= â10mA , II= â0.5mA
VI= â5V
VCC= â50V , VI=0V
IO= â10mA , VO= â5V
â
â
VCE= â10V , IE=5mA , f=100MHz
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