LDTA114GET1G_15 Datasheet, PDF (1/3 Pages) Leshan Radio Company – Bias Resistor Transistor

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation
Junction temperature
Storage temperature
Symbol Limits Unit
VCBO
−50
V
VCEO
−50
V
VEBO
−5
V
IC
−100 mA
Pc
200
mW
Tj
150
°C
Tstg −55 to +150 °C
LDTA114GET1G
3
1
2
SC-89
1
BASE R2
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTA114GET1G
Q1
−
10
3000/Tape & Reel
LDTA114GET1G
Q1
−
10
10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO −50 − − V IC= −50µA
Collector-emitter breakdown voltage BVCEO −50 − − V IC= −1mA
Emitter-base breakdown voltage
BVEBO −5 −
−
V IE= −720µA
Collector cutoff current
ICBO
−
− −0.5 µA VCB= −50V
Emitter cutoff current
IEBO −300 − −580 µA VEB= −4V
Collector-emitter saturation voltage VCE(sat) − − −0.3 V IC= −10mA, IB= −0.5mA
DC current transfer ratio
hFE
30 −
−
− IC= −5mA, VCE= −5V
Emitter-base resistance
Transition frequency
R1
7 10 13 kΩ
−
fT
− 250 − MHz VCE= −10V, IE=50mA, f=100MHz ^∗
∗Transition frequency of the device.
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