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LDTA113TKT1G_15 Datasheet, PDF (1/3 Pages) Leshan Radio Company – Bias Resistor Transistor | |||
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LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
⢠Applications
Inverter, Interface, Driver
⢠Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
⢠We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
Pc
Tj
Tstg
Limits
Unit
â50
V
â50
V
â5 to +10
V
â100
mA
200
mW
150
°C
â55 to +150
°C
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTA113TKT1G
O2
1
3000/Tape & Reel
LDTA113TKT3G
O2
1
10000/Tape & Reel
LDTA113TKT1G
3
1
2
SC-89
R1
1
BASE
3
COLLECTOR
2
EMITTER
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
â Characteristics of built-in transistor
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R1
fT â
Min. Typ. Max. Unit
Conditions
â50
â
â
V IC= â50µA
â50
â
â
V IC= â1mA
â5
â
â
V IE= â50µA
â
â
â0.5 µA VCB= â50V
â
â
â0.5 µA VEB= â4V
â
â
â0.3
V IC /IB= â5mA / â0.25mA
100 250 600
â IC= â1mA , VCE= â5V
0.7
1
1.3 kâ¦
â
â
250
â
MHz VCB= â10V , IE=5mA , f=100MHz
1/3
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