LDAN222T1 Datasheet, PDF (1/3 Pages) Leshan Radio Company – Common Cathode Silicon Dual Switching Diode

Common Cathode Silicon
Dual Switching Diode
This Common Cathode Silicon Epitaxial Planar Dual Diode is
designed for use in ultra high speed switching applications. This
device is housed in the SC–89 package which is designed for low
power surface mount applications, where board space is at a premium.
• Fast trr
• Low CD
• Available in 8 mm Tape and Reel
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Reverse Voltage
VR
Peak Reverse Voltage
Forward Current
Peak Forward Current
VRM
IF
IFM
Peak Forward Surge Current
IFSM(1)
THERMAL CHARACTERISTICS
Rating
Symbol
Power Dissipation
PD
Junction Temperature
TJ
Storage Temperature Range
Tstg
1. t = 1 µS
Value
80
80
100
300
2.0
Max
150
150
–55 to +150
Unit
Vdc
Vdc
mAdc
mAdc
Adc
Unit
mW
°C
°C
LDAN222T1
3
1
2
SC-89
3
CATHODE
1
ANODE
2
ANODE
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Condition
Min
Reverse Voltage Leakage Current
Forward Voltage
Reverse Breakdown Voltage
Diode Capacitance
Reverse Recovery Time
2. trr Test Circuit on following page.
IR
VR = 70 V
—
VF
IF = 100 mA
—
VR
IR = 100 µA
80
CD
VR = 6.0 V, f = 1.0 MHz
—
trr(2) IF = 5.0 mA, VR = 6.0 V, RL = 100 Ω, Irr = 0.1 IR
—
Driver Marking
LDAN222T1=N9
Max
Unit
0.1
µAdc
1.2
Vdc
—
Vdc
3.5
pF
4.0
ns
LDAN222T1-1/3