English
Language : 

LBZT52B2V0T1G_15 Datasheet, PDF (1/3 Pages) Leshan Radio Company – Surface Mount Zener Diodes
LESHAN RADIO COMPANY, LTD.
Surface Mount Zener Diodes
Features:
*500mw Power Dissipation
*Ideal for Surface Mountted Application
*Zener Breakdown Voltage Range 2.0V to 36V
*Pb-Free package is available
LBZT52B2V0T1G
Series
1
2
Mechanical Data:
*Case : SOD-123 Molded plastic
*Terminals: Solderable per MIL-STD-202, Method 208
*Polarity: Cathode Indicated by Polarity Band
*Marking: Marking Code (See Specific marking table)
*Weigh: 0.01grams(approx)
SOD-123
Equivalent Circuit Diagram
1
Cathode
2
Anode
Maximum Ratings and Electrical Characteristics (TA=25 C Unless Otherwise Noted)
Characteristics
Symbol
Value
Unit
Total Power Dissipation on FR-5 Board(1)
PD
500
mW
Thermal Resistance Junction to Ambient Air (1)
R JA
305
C/W
Forward Voltage @ IF=10mA
VF
0.9
V
Junction and Storage Temperature Range
Tj,TSTG
-55 to +150
C
NOTES: 1. Device mounted on ceramic PCB; 7.6mm -9.4mm -0.87mm with pad areas 25mm2
Device Marking Code
Ratings and Characteristic curves
Device
LBZT52B2V0T1G
LBZT52B2V2T1G
LBZT52B2V4T1G
LBZT52B2V7T1G
LBZT52B3V0T1G
LBZT52B3V3T1G
LBZT52B3V6T1G
LBZT52B3V9T1G
LBZT52B4V3T1G
LBZT52B4V7T1G
LBZT52B5V1T1G
LBZT52B5V6T1G
LBZT52B6V2T1G
LBZT52B6V8T1G
LBZT52B7V5T1G
LBZT52B8V2T1G
Marking
02
12
22
32
42
52
62
72
82
92
A2
C2
E2
F2
H2
J2
Device
Marking
LBZT52B9V1T1G L2
LBZT52B10T1G
05
LBZT52B11T1G 15
LBZT52B12T1G
25
LBZT52B13T1G 35
LBZT52B15T1G 45
LBZT52B16T1G 55
LBZT52B18T1G 65
LBZT52B20T1G 75
LBZT52B22T1G 85
LBZT52B24T1G 95
LBZT52B27T1G A5
LBZT52B30T1G C5
LBZT52B33T1G E5
LBZT52B36T1G F5
-
-
0.6
0.5
0.4
0.3
0.2
0.1
0
0
25
50
75 100 125 150
TA,AMBIENT TEMPERATURE(OC)
FIG. 1 Power Disspation vs Ambient temperaute
Rev.O 1/3