LBCW69LT1G Datasheet, PDF (1/7 Pages) Leshan Radio Company – General Purpose Transistors PNP Silicon

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
Featrues
We declare that the material of product
compliance with RoHS requirements.
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Emitter–Base Voltage
V _CEO
V _EBO
Collector Current — Continuous I _C
1
BASE
3
COLLECTOR
2
EMITTER
Value
– 45
– 5.0
– 100
Unit
Vdc
Vdc
mAdc
LBCW69LT1G
LBCW70LT1G
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P_D
R_θJA
P_D
R_θJA
T_J , T_stg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
mW/°C
417
–55 to +150
°C/W
°C
DEVICE MARKING
LBCW69LT1G = H1; LBCW70LT1G= H2
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (I_C = –2.0 mAdc, I_B = 0 )
Collector–Emitter Breakdown Voltage (I_C = –100 µAdc, V _EB = 0 )
Emitter–Base Breakdown Voltage (I _E= –10 µAdc, I _C = 0)
Collector Cutoff Current
(V_CE = –20 Vdc, I _E = 0 )
(V_CE = –20 Vdc, I _E = 0 , T_A = 100°C)
1. FR– 5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V _(BR)CEO
V _(BR)CES
V _(BR)EBO
I _CEO
Min
Max
Unit
– 45
—
Vdc
– 50
—
Vdc
– 5.0
—
Vdc
—
– 100
nAdc
—
– 10
µAdc
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