|
LBCW68GLT1G Datasheet, PDF (1/3 Pages) Leshan Radio Company – General Purpose Transistors | |||
|
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
We declare that the material of product compliance with RoHS requirements.
LBCW68GLT1G
ORDERING INFORMATION
Device
Marking
LBCW68GLT1G
DG
LBCW68GLT3G
DG
Shipping
3000/Tape&Reel
10000/Tape&Reel
MAXIMUM RATINGS
Rating
Symbol
CollectorâEmitter Voltage
CollectorâBase Voltage
EmitterâBase Voltage
V CEO
V CBO
V EBO
Collector Current â Continuous I C
Value
â 45
â 60
â 5.0
â 800
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FRâ 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max
225
1.8
556
300
2.4
417
â55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
CollectorâEmitter Breakdown Voltage (IC = â10 mAdc, IB = 0 )
CollectorâEmitter Breakdown Voltage (IC = â10 µAdc, VEB = 0 )
EmitterâBase Breakdown Voltage (I E= â10 µAdc, I C = 0)
Collector Cutoff Current
(VCE = â45 Vdc, I E= 0 )
(VCE = â45 Vdc, I B= 0 , TA = 150°C)
Emitter Cutoff Current (VEB = â 4.0 Vdc, I C = 0)
1. FRâ 5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V (BR)CEO
V (BR)CES
V (BR)EBO
I CES
I EBO
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Min Typ
â 45
â
â 60
â
â 5.0 â
â
â
â
â
â
â
3
1
2
CASE 318â08, STYLE 6
SOTâ23 (TOâ236AB)
1
BASE
3
COLLECTOR
2
EMITTER
Max Unit
â Vdc
â Vdc
â Vdc
â 20 nAdc
â 10 µAdc
â 20 nAdc
1/3
|
▷ |