LBCW65ALT1G Datasheet, PDF (1/3 Pages) Leshan Radio Company – General Purpose Transistors NPN Silicon

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
LBCW65ALT1G
Featrues
We declare that the material of product
compliance with RoHS requirements.
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V _CEO
Collector–Base Voltage
V _CBO
Emitter–Base Voltage
V _EBO
Collector Current — Continuous I _C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Value
32
60
5.0
800
Unit
Vdc
Vdc
Vdc
mAdc
Symbol
P_D
R_θJA
P_D
R_θJA
T_J , T_stg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
mW/°C
417
–55 to +150
°C/W
°C
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
1
BASE
3
COLLECTOR
2
EMITTER
DEVICE MARKING
LBCW65ALT1G = EA
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
V _(BR)CEO
32
—
(I_C = 10mAdc, I _B= 0 )
Collector–Emitter Breakdown Voltage
V _(BR)CES
60
—
(I_C = 10 µAdc, V _EB = 0 )
Emitter–Base Breakdown Voltage
(I _E= 10 µAdc, I _C = 0)
V _(BR)EBO
5.0
—
Collector Cutoff Current
I _CES
(V_CE = 32 Vdc, I_E = 0 )
—
—
(V_CE = 32 Vdc, I_E = 0 , T_A = 150°C)
—
—
Emitter Cutoff Current
(V _EB= 4.0 Vdc, I _C = 0)
I _EBO
—
—
1. FR– 5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Max
Unit
—
Vdc
—
Vdc
—
Vdc
20
nAdc
20
µAdc
20
nAdc
Rev.O 1/3