LBC858CWT1G Datasheet, PDF (1/6 Pages) Leshan Radio Company – General Purpose Transistors PNP Silicon

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
These transistors are designed for general purpose
amplifier applications. They are housed in the SOT–323/
SC–70 which is designed for low power surface mount
applications.
Features
We declare that the material of product compliance with
RoHS requirements.
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
V _CEO
V _CBO
V _EBO
I_C
BC856
–65
–80
–5.0
–100
BC857
–45
–50
–5.0
–100
BC858
–30
–30
–5.0
–100
Unit
V
V
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T_A = 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P_D
R _θJA
T _J , T _stg
Max
150
833
–55 to +150
Unit
mW
°C/W
°C
LBC856AWT1G, BWT1G
LBC857AWT1G, BWT1G
CWT1G
LBC858AWT1G, BWT1G
CWT1G
3
1
2
SOT– 323 / SC-70
1
BASE
3
COLLECTOR
2
EMITTER
DEVICE MARKING
LBC856AWT1G= 3A; LBC856BWT1G= 3B; LBC857AWT1G= 3E; LBC857BWT1G = 3F;
LBC857CWT1G= 3G; LBC858AWT1G= 3J; LBC858BWT1G= 3K; LBC858CWT1G= 3L
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I_C = –10 mA)
Collector–Emitter Breakdown Voltage
(I_C = –10 µA, V_EB = 0)
LBC856 Series
LBC857 Series
LBC858 Series
LBC856 Series
LBC857B Only
LBC858 Series
Collector–Base Breakdown Voltage
(I_C = – 10 µA)
LBC856 Series
LBC857 Series
LBC858 Series
Emitter–Base Breakdown Voltage
(I_E = – 1.0 µA)
LBC856 Series
LBC857 Series
LBC858 Series
Collector Cutoff Current (V_CB = – 30 V)
(V_CB = – 30 V, T_A = 150°C)
1.FR–5=1.0 x 0.75 x 0.062in
– 65
—
—
V _(BR)CEO
– 45
—
—
v
– 30
—
—
– 80
—
—
V _(BR)CES
– 50
—
—
v
– 30
—
—
– 80
—
—
V _(BR)CBO
– 50
—
—
v
– 30
—
—
– 5.0
—
—
V _(BR)EBO
– 5.0
—
—
v
– 5.0
—
—
I _CBO
—
—
– 15
nA
—
—
– 4.0 µA
Rev.O 1/6