|
LBC858CDW1T1G_15 Datasheet, PDF (1/6 Pages) Leshan Radio Company – Dual General Purpose Transistors | |||
|
LESHAN RADIO COMPANY, LTD.
Dual General Purpose
Transistors
These transistors are designed for general purpose amplifier
applications. They are housed in the SOTâ363/SCâ88 which is
designed for low power surface mount applications.
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site and
Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
⢠Device Marking:
(S-)LBC856ADW1T1G= 3A
(S-)LBC856BDW1T1G= 3B
(S-)LBC857BDW1T1G= 3F
(S-)LBC857CDW1T1G= 3G
(S-)LBC858BDW1T1G= 3K
(S-)LBC858CDW1T1G = 3L
MAXIMUM RATINGS
Rating
Symbol BC856 BC857 BC858 Unit
CollectorâEmitter Voltage
VCEO
â65
â45
â30
V
CollectorâBase Voltage
VCBO
â80
â50
â30
V
EmitterâBase Voltage
VEBO â5.0 â5.0 â5.0
V
Collector Current â
Continuous
IC
â100 â100 â100 mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation
PD
Per Device
FRâ5 Board (Note 1.)
TA = 25°C
Derate Above 25°C
Thermal Resistance,
Junction to Ambient
RqJA
Junction and Storage
Temperature Range
TJ, Tstg
1. FRâ5 = 1.0 x 0.75 x 0.062 in
Max
380
250
3.0
328
â55 to +150
Unit
mW
mW/°C
°C/W
°C
ORDERING INFORMATION
Device
LBC85*BDW1T1G
LBC85*BDW1T3G
Shipping
3000/Tape & Reel
10000/Tape & Reel
LBC85** DW1T1G
S-LBC85** DW1T1G
65 4
1
2
3
SOT-363
(3)
(2)
(1)
Q1
Q2
(4)
(5)
(6)
DEVICE MARKING
See Table
Rev.O 1/6
|
▷ |