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LBC857BTT1G_15 Datasheet, PDF (1/5 Pages) Leshan Radio Company – General Purpose Transistors
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SC−89 package which is designed
for low power surface mount applications.
Features
• Pb−Free Packages are Available
• S- Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC-Q101 Qualified and
PPAP Capable.
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol Max Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
VCEO
VCBO
VEBO
IC
−45
−50
−5.0
−100
V
V
V
mAdc
LBC857ATT1G
Series
S-LBC857ATT1G
Series
SC-89
1
B ASE
3
COLLECT OR
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation,
FR−4 Board (Note 1)
TA = 25°C
Derated above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 1)
Total Device Dissipation,
FR−4 Board (Note 2)
TA = 25°C
Derated above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
Junction and Storage
Temperature Range
1. FR−4 @ min pad.
2. FR−4 @ 1.0 × 1.0 in pad.
Symbol
PD
RqJA
Max Unit
200
mW
1.6 mW/°C
600 °C/W
PD
RqJA
300
mW
2.4 mW/°C
400 °C/W
TJ, Tstg −55 to
°C
+150
2
EMIT T ER
ORDERING INFORMATION
Device
LBC857ATT1G,S-LBC857ATT1G
LBC857BTT1G,S-LBC857BTT1G
LBC857CTT1G,S-LBC857CTT1G
Marking
3E
3F
3G
Package
SC−89
SC−89
SC−89
Shipping†
3,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
Rev.O 1/5