LBC857AWT1G_15 Datasheet, PDF (1/6 Pages) Leshan Radio Company – General Purpose Transistors

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
These transistors are designed for general purpose
amplifier applications. They are housed in the SOT–323/
SC–70 which is designed for low power surface mount
applications.
Features
We declare that the material of product compliance with
RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
V _CEO
V _CBO
V _EBO
I_C
BC856
–65
–80
–5.0
–100
BC857
–45
–50
–5.0
–100
BC858
–30
–30
–5.0
–100
Unit
V
V
V
mAdc
LBC856AWT1G, BWT1G
LBC857AWT1G, BWT1G
CWT1G
LBC858AWT1G, BWT1G
CWT1G
S-LBC856AWT1G, BWT1G
S-LBC857AWT1G, BWT1G
CWT1G
S-LBC858AWT1G, BWT1G
CWT1G
3
1
2
SOT– 323 / SC-70
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T_A = 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P_D
R _θJA
T _J , T _stg
Max
150
833
–55 to +150
Unit
mW
°C/W
°C
1
BASE
DEVICE MARKING
(S-)LBC856AWT1G= 3A; (S-)LBC856BWT1G= 3B;(S-)LBC857AWT1G= 3E; (S-)LBC857BWT1G = 3F;
(S-)LBC857CWT1G= 3G; (S-)LBC858AWT1G= 3J; (S-)LBC858BWT1G= 3K; (S-)LBC858CWT1G= 3L
3
COLLECTOR
2
EMITTER
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I_C = –10 mA)
Collector–Emitter Breakdown Voltage
(I_C = –10 µA, V_EB = 0)
LBC856 Series
LBC857 Series
LBC858 Series
LBC856 Series
LBC857B Only
LBC858 Series
Collector–Base Breakdown Voltage
(I_C = – 10 µA)
LBC856 Series
LBC857 Series
LBC858 Series
Emitter–Base Breakdown Voltage
(I_E = – 1.0 µA)
LBC856 Series
LBC857 Series
LBC858 Series
Collector Cutoff Current (V_CB = – 30 V)
(V_CB = – 30 V, T_A = 150°C)
1.FR–5=1.0 x 0.75 x 0.062in
– 65
—
—
V _(BR)CEO
– 45
—
—
v
– 30
—
—
– 80
—
—
V _(BR)CES
– 50
—
—
v
– 30
—
—
– 80
—
—
V _(BR)CBO
– 50
—
—
v
– 30
—
—
– 5.0
—
—
V _(BR)EBO
– 5.0
—
—
v
– 5.0
—
—
I _CBO
—
—
– 15
nA
—
—
– 4.0 µA
Rev.O 1/6