LBC857ALT1G_15 Datasheet, PDF (1/7 Pages) Leshan Radio Company – General Purpose Transistors

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
• Moisture Sensitivity Level: 1
• ESD Rating – Human Body Model: >4000 V
ESD Rating – Machine Model: >400 V
• We declare that the material of product compliance with
RoHS requirements.
• S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol Value
Collector-Emitter Voltage
LBC856 VCEO
–65
LBC857
–45
LBC858, LBC859
–30
Collector-Base Voltage
LBC856 VCBO
–80
LBC857
–50
LBC858, LBC859
–30
Emitter–Base Voltage
Collector Current – Continuous
THERMAL CHARACTERISTICS
VEBO
IC
–5.0
–100
Characteristic
Symbol Max
Total Device Dissipation FR–5 Board,
(Note 1.) TA = 25°C
Derate above 25°C
PD
225
1.8
Thermal Resistance,
Junction to Ambient
R_qJA
556
Total Device Dissipation Alumina
Substrate, (Note 2.) TA = 25°C
Derate above 25°C
PD
300
2.4
Thermal Resistance,
Junction to Ambient
R_qJA
417
Junction and Storage Temperature
TJ, Tstg
1. FR–5 = 1.0 x 0.75 x 0.062 in
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
–55 to
+150
Unit
V
V
V
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
LBC857CLT1G
Series
S-LBC857CLT1G
Series
3
1
2
SOT–23
1
B ASE
3
COLLECT OR
2
EMIT T ER
MARKING DIAGRAM
3
xx
1
2
xx= Device Marking
(See Table Below)
Rev.O 1/7