LBC856BDW1T1G_15 Datasheet, PDF (1/6 Pages) Leshan Radio Company – Dual General Purpose Transistors

LESHAN RADIO COMPANY, LTD.
Dual General Purpose
Transistors
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–363/SC–88 which is
designed for low power surface mount applications.
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
• ^{Device Marking:}
(S-)LBC856ADW1T1G= 3A
(S-)LBC856BDW1T1G= 3B
(S-)LBC857BDW1T1G= 3F
(S-)LBC857CDW1T1G= 3G
(S-)LBC858BDW1T1G= 3K
(S-)LBC858CDW1T1G = 3L
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current –
Continuous
Symbol BC856 BC857 BC858 Unit
V_CEO
V_CBO
V_EBO
I_C
–65
–80
–5.0
–100
–45
–50
–5.0
–100
–30
–30
–5.0
–100
V
V
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation
P_D
Per Device
FR–5 Board (Note 1.)
T_A = 25°C
Derate Above 25°C
Thermal Resistance,
Junction to Ambient
R_qJA
Junction and Storage
Temperature Range
T_J, T_stg
1. FR–5 = 1.0 x 0.75 x 0.062 in
Max
380
250
3.0
328
–55 to +150
Unit
mW
mW/°C
°C/W
°C
ORDERING INFORMATION
Device
LBC85*BDW1T1G
LBC85*BDW1T3G
Shipping
3000/Tape & Reel
10000/Tape & Reel
LBC85** DW1T1G
S-LBC85** DW1T1G
65 ₄
1
2
3
SOT-363
(3)
(2)
(1)
Q₁
Q₂
(4)
(5)
(6)
DEVICE MARKING
See Table
Rev.O 1/6