LBC856BDW1T1 Datasheet, PDF (1/6 Pages) Leshan Radio Company – Dual General Purpose Transistors

LESHAN RADIO COMPANY, LTD.
Dual General Purpose
Transistors
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–363/SC–88 which is
designed for low power surface mount applications.
• Device Marking:
LBC856BDW1T1 = 3B
LBC857BDW1T1 = 3F
LBC857CDW1T1 = 3G
LBC858BDW1T1 = 3K
LBC858CDW1T1 = 3L
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current –
Continuous
Symbol BC856 BC857 BC858 Unit
V_CEO
V_CBO
V_EBO
I_C
–65
–80
–5.0
–100
–45
–50
–5.0
–100
–30
–30
–5.0
–100
V
V
V
mAdc
LBC856*DW1T1
65 ₄
1
2
3
SOT-363
(3)
(2)
(1)
Q₁
Q₂
(4)
(5)
(6)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation
P_D
Per Device
FR–5 Board (Note 1.)
T_A = 25°C
Derate Above 25°C
Thermal Resistance,
Junction to Ambient
R_qJA
Junction and Storage
Temperature Range
T_J, T_stg
1. FR–5 = 1.0 x 0.75 x 0.062 in
Max
380
250
3.0
328
–55 to +150
Unit
mW
mW/°C
°C/W
°C
DEVICE MARKING
See Table
ORDERING INFORMATION
Device
Package
Shipping
LBC856BDW1T1 SOT–363 3000 Units/Reel
LBC857BDW1T1 SOT–363 3000 Units/Reel
LBC857CDW1T1 SOT–36 3 3000 Units/Reel
LBC858BDW1T1 SOT–363 3000 Units/Reel
LBC858CDW1T1 SOT–363 3000 Units/Reel
LBC856–1/6