LBC856AWT1 Datasheet, PDF (1/6 Pages) Leshan Radio Company – General Purpose Transistors PNP Silicon

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
These transistors are designed for general purpose
amplifier applications. They are housed in the SOT–323/
SC–70 which is designed for low power surface mount
applications.
Features
Pb– Free Package May be Available. The G.Suffix Denotes a
Pb– Free Lead Finish
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V _CEO
Collector–Base Voltage
V _CBO
Emitter–Base Voltage
V _EBO
Collector Current — Continuous I _C
BC856
–65
–80
–5.0
–100
BC857
–45
–50
–5.0
–100
BC858
–30
–30
–5.0
–100
Unit
V
V
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T_A = 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P_D
R _θJA
T _J , T _stg
Max
Unit
150
mW
833
–55 to +150
°C/W
°C
DEVICE MARKING
LBC856AWT1 = 3A; LBC856BWT1 = 3B; LBC857AWT1 = 3E; LBC857BWT1 = 3F;
LBC858AWT1 = 3J; LBC858BWT1 = 3K; LBC858CWT1 = 3L
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I_C = –10 mA)
Collector–Emitter Breakdown Voltage
(I_C = –10 µA, V_EB = 0)
LBC856 Series
LBC857 Series
LBC858 Series
LBC856 Series
LBC857 Series
LBC858 Series
Collector–Base Breakdown Voltage
(I_C = – 10 µA)
LBC856 Series
LBC857 Series
LBC858 Series
Emitter–Base Breakdown Voltage
(I_E = – 1.0 µA)
LBC856 Series
LBC857 Series
LBC858 Series
Collector Cutoff Current (V_CB = – 30 V)
(V_CB = – 30 V, T_A = 150°C)
1.FR–5=1.0 x 0.75 x 0.062in
– 65
—
V _(BR)CEO
– 45
—
– 30
—
– 80
—
V _(BR)CES
– 50
—
– 30
—
– 80
—
V _(BR)CBO
– 50
—
– 30
—
– 5.0
—
V _(BR)EBO
– 5.0
—
– 5.0
—
I _CBO
—
—
—
—
LBC856AWT1, BWT1
LBC857AWT1, BWT1
LBC858AWT1, BWT1
CWT1
3
1
2
SOT– 323 / SC-70
1
BASE
3
COLLECTOR
2
EMITTER
Max Unit
—
—
v
—
—
—
v
—
—
—
v
—
—
—
v
—
– 15 nA
– 4.0 µA
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