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LBC847BTT1G_15 Datasheet, PDF (1/5 Pages) Leshan Radio Company – General Purpose Transistors
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SC−89 package which is designed
for low power surface mount applications.
Features
• Pb−Free Packages are Available
• S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LBC847ATT1G
S-LBC847ATT1G
Series
MAXIMUM RATINGS (TA = 25°C)
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation,
FR−4 Board (Note 1)
TA = 25°C
Derated above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 1)
Total Device Dissipation,
FR−4 Board (Note 2)
TA = 25°C
Derated above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
Junction and Storage
Temperature Range
1. FR−4 @ min pad.
2. FR−4 @ 1.0 × 1.0 in pad.
Symbol
VCEO
VCBO
VEBO
IC
Max Unit
45
V
50
V
6.0
V
100 mAdc
Symbol
PD
RqJA
Max Unit
200
mW
1.6 mW/°C
600 °C/W
PD
RqJA
300
mW
2.4 mW/°C
400 °C/W
TJ, Tstg −55 to
°C
+150
SC-89
1
B ASE
3
COLLECT OR
2
EMIT T ER
ORDERING INFORMATION
Device
LBC847ATT1G
S-LBC847ATT1G
LBC847BTT1G
S-LBC847BTT1G
LBC847CTT1G
S-LBC847CTT1G
Marking
1E
1F
1G
Package
SC−89
SC−89
SC−89
Shipping†
3,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
Rev.O 1/5