LBC847BDW1T1G_15 Datasheet, PDF (1/6 Pages) Leshan Radio Company – Dual General Purpose Transistors

LESHAN RADIO COMPANY, LTD.
Dual General Purpose Transistors
NPN Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–363/SC–88 which is
designed for low power surface mount applications.
We declare that the material of product compliance with
RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
6
5
4
LBC846ADW1T1G
LBC846BDW1T1G
LBC847BDW1T1G
LBC847CDW1T1G
LBC848BDW1T1G
LBC848CDW1T1G
S-LBC846ADW1T1G
S-LBC846BDW1T1G
S-LBC847BDW1T1G
S-LBC847CDW1T1G
S-LBC848BDW1T1G
S-LBC848CDW1T1G
Q₂
Q₁
See Table
1
2
3
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current -Continuous
V _CEO
V _CBO
V _EBO
I_C
BC846
65
80
6.0
100
BC847 BC848
45
30
50
30
6.0
5.0
100
100
Unit
V
V
V
mAdc
6
5
4
1
2
3
SOT-363 /SC-88
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
Per Device
FR– 5 Board, (1) T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
Symbol
P_D
R _θJA
T _J , T _stg
Max
Unit
380
mW
250
mW
3.0
328
–55 to +150
mW/°C
°C/W
°C
ORDERING INFORMATION
Device
LBC846ADW1T1G
LBC846ADW1T3G
S-LBC846ADW1T1G
S-LBC846ADW1T3G
LBC846BDW1T1G
LBC846BDW1T3G
LBC847BDW1T1G
LBC847BDW1T3G
LBC847CDW1T1G
S-LBC846BDW1T1G
S-LBC846BDW1T3G
S-LBC847BDW1T1G
S-LBC847BDW1T3G
S-LBC847CDW1T1G
LBC847CDW1T3G
S-LBC847CDW1T3G
LBC848BDW1T1G
S-LBC848BDW1T1G
LBC848BDW1T3G
S-LBC848BDW1T3G
LBC848CDW1T1G
LBC848CDW1T3G
S-LBC848CDW1T1G
S-LBC848CDW1T3G
Marking
1A
1A
1B
1B
1F
1F
1G
1G
1K
1K
1L
1L
Shipping
3000 Units/Reel
10000 Units/Reel
3000 Units/Reel
10000 Units/Reel
3000 Units/Reel
10000 Units/Reel
3000 Units/Reel
10000 Units/Reel
3000 Units/Reel
10000 Units/Reel
3000 Units/Reel
10000 Units/Reel
Rev.O 1/6