LBC846BPDW1T1G_11 Datasheet, PDF (1/9 Pages) Leshan Radio Company – Dual General Purpose Transistors NPN/PNP Duals (Complimentary)

LESHAN RADIO COMPANY, LTD.
Dual General Purpose Transistors
NPN/PNP Duals (Complimentary)
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–363/SC–88 which is
designed for low power surface mount applications.
We declare that the material of product compliance with
RoHS requirements.
ORDERING INFORMATION
Device
LBC846BPDW1T1G
LBC846BPDW1T3G
LBC847BPDW1T1G
LBC847BPDW1T3G
LBC847CPDW1T1G
LBC847CPDW1T3G
LBC848BPDW1T1G
LBC848BPDW1T3G
LBC848CPDW1T1G
LBC848CPDW1T3G
Marking
BB
BB
BF
BF
BG
BG
BK
BK
BL
BL
Shipping
3000 Units/Reel
10000 Units/Reel
3000 Units/Reel
10000 Units/Reel
3000 Units/Reel
10000 Units/Reel
3000 Units/Reel
10000 Units/Reel
3000 Units/Reel
10000 Units/Reel
MAXIMUM RATINGS - NPN
Rating
Symbol LBC846 LBC847 LBC848 Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
VCEO
65
45
30
V
VCBO
80
50
30
V
VEBO 6.0
6.0
5.0
V
Collector Current Ð
Continuous
IC
100 100 100 mAdc
MAXIMUM RATINGS - PNP
Rating
Symbol LBC846 LBC847 LBC848 Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Ð
Continuous
VCEO
VCBO
VEBO
IC
-65
-80
-5.0
-100
-45
-50
-5.0
-100
-30
-30
-5.0
-100
V
V
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation
PD
Per Device
FR-5 Board ⁽¹⁾
TA = 25˚C
Derate Above 25˚C
Thermal Resistance,
Junction to Ambient
R_θJA
Junction and Storage
Temperature Range
TJ, Tstg
1. FR-5 = 1.0 x 0.75 x 0.062 in
Max
380
250
3.0
328
-55 to +150
Unit
mW
mW/˚C
˚C/W
˚C
LBC846BPDW1T1G
LBC847BPDW1T1G
LBC847CPDW1T1G
LBC848BPDW1T1G
LBC848CPDW1T1G
6
5
4
1
2
3
SOT-363/SC-88
CASE 419B STYLE 1
3
2
1
Q₁
Q₂
4
5
6
DEVICE MARKING
See Table
Rev.O 1/9